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FP35R12W2T4BOMA1
FP35R12W2T4BOMA1Reference image

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Mfr. #:
FP35R12W2T4BOMA1
Batch:
new
Description:
Infineon IGBT module, max 1200 V, max 54 A
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Specifications
frequently asked question
Product AttributeAttribute Value
Maximum continuous collector current 54 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 215 W
Package type AG-EASY2B-1
Configuration 3-phase bridge
Mounting type Panel mount
Channel type N
Number of pins -
Switching speed -
Transistor configuration 3-phase
Dimensions 56.7 x 48 x 12mm
Other product information

Advantage price,FP35R12W2T4BOMA1 in stock can be shipped on the same day

In Stock: 15
Qty.Unit PriceExt. Price
15+ $52.2986 $784.479
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
15
Minimum:
15
MPQ:
15
Multiples:
1
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