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FP35R12KT4B11BOSA1
FP35R12KT4B11BOSA1Reference image

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Mfr. #:
FP35R12KT4B11BOSA1
Batch:
new
Description:
Infineon IGBT module, max 1200 V, max 35 A
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Specifications
frequently asked question
Product AttributeAttribute Value
Maximum continuous collector current 35 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 210 W
Package type ECONO2
Configuration 3-phase bridge
Mounting type PCB (printed circuit board) mounting
Channel type N
Number of pins 23
Switching speed 1MHz
Transistor configuration 3-phase
Dimensions 107.5 x 45 x 17mm
Other product information

Advantage price,FP35R12KT4B11BOSA1 in stock can be shipped on the same day

In Stock: 1
Qty.Unit PriceExt. Price
1+ $120.9191 $120.9191
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
1
Minimum:
1
MPQ:
1
Multiples:
1
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