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F475R06W1E3BOMA1
F475R06W1E3BOMA1Reference image

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Mfr. #:
F475R06W1E3BOMA1
Batch:
new
Description:
Infineon IGBT module, max 600 V, max 100 A
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Specifications
frequently asked question
Product AttributeAttribute Value
Maximum continuous collector current 100 A
Maximum collector-emitter voltage 600 V
Maximum gate-emitter voltage /-20 V
Number of transistors 4
Maximum power dissipation 275 W
Package type -
Configuration Emitter-collector, quad (2x dual)
Mounting type -
Channel type -
Number of pins -
Switching speed -
Transistor configuration -
Dimensions -
Other product information

Advantage price,F475R06W1E3BOMA1 in stock can be shipped on the same day

In Stock: 1
Qty.Unit PriceExt. Price
1+ $34.7437 $34.7437
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
1
Minimum:
1
MPQ:
1
Multiples:
1
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