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NXH100B120H3Q0SG
NXH100B120H3Q0SGReference image

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Mfr. #:
NXH100B120H3Q0SG
Mfr.:
Batch:
new
Description:
Onsemi IGBT module, max 1200 V, max 61 A
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Specifications
frequently asked question
Product AttributeAttribute Value
Maximum continuous collector current 61 A
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors 2
Maximum power dissipation 186 W
Package type Box 180AJ (lead-free and halide-free) Solder pins
Configuration -
Mounting type -
Channel type -
Number of pins -
Switching speed -
Transistor configuration -
Dimensions -
Other product information

Advantage price,NXH100B120H3Q0SG in stock can be shipped on the same day

In Stock: 1
Qty.Unit PriceExt. Price
1+ $74.9706 $74.9706
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
1
Minimum:
1
MPQ:
1
Multiples:
1
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