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NXH100B120H3Q0STG
NXH100B120H3Q0STGReference image

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Mfr. #:
NXH100B120H3Q0STG
Mfr.:
Batch:
new
Description:
onsemi igbt module, max 1200 v
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Specifications
frequently asked question
Product AttributeAttribute Value
Maximum continuous collector current -
Maximum collector-emitter voltage 1200 V
Maximum gate-emitter voltage ±20 V
Number of transistors -
Maximum power dissipation 186 W
Package type Q0BOOST
Configuration Dual
Mounting type Surface mount
Channel type N
Number of pins 22
Switching speed -
Transistor configuration Dual
Dimensions 66.2 x 32.8 x 11.9mm
Other product information

Advantage price,NXH100B120H3Q0STG in stock can be shipped on the same day

In Stock: 24
Qty.Unit PriceExt. Price
24+ $74.9794 $1799.5056
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
24
Minimum:
24
MPQ:
24
Multiples:
1
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