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GT50JR21
GT50JR21Reference image

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Mfr. #:
GT50JR21
Mfr.:
Batch:
new
Description:
Toshiba IGBT, max. 600 V, max. 50 A
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Specifications
frequently asked question
Product AttributeAttribute Value
Maximum continuous collector current 50 A
Maximum collector-emitter voltage 600 V
Maximum gate-emitter voltage ±25 V
Number of transistors -
Maximum power dissipation 230 W
Package type TO-3P
Configuration -
Mounting type Through hole
Channel type N
Number of pins 3
Switching speed 1MHz
Transistor configuration Single
Dimensions 15.5 x 4.5 x 20mm
Other product information

Advantage price,GT50JR21 in stock can be shipped on the same day

In Stock: 25
Qty.Unit PriceExt. Price
25+ $7.3909 $184.7725
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
25
Minimum:
25
MPQ:
25
Multiples:
1
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